simple drive requirement small package outline surface mount device symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 110 /w rating -16 8 -4.7 0.7 1.1 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current 3 continuous drain current 3 -3.3 pulsed drain current 1 -20 parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 g d s leshan radio company, ltd. sot? 23 (to?236ab) s-lp2307lt1g 16v p-channel enhancement-mode mosfet v ds = -16v features advanced trench process technology high density cell design for ultra low on-resistance p d a =70 @t total power dissipation r ds(on), vgs@-4.5v, ids@-4.7a = 7 0 r ds(on), vgs@-2.5v, ids@-1.0a = 1 1 0 m m device shipping p07 marking 3000/tape&reel lp2307lt1g p07 lp2307lt3g 10000/tape&reel ordering information absolute maximum ratings thermal data 1 2 3 rev .o 1/4 1 2 3 lp2307lt1g s- prefix for automotive and other applications requiring unique site and control change requirements; aec-q101 qualified and ppap capable. s-lp2307lt1g s-lp2307lt3g
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -16 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-4.7a 70 m v gs =-2.7v, i d =-3.8a - 100 m v gs =-2.5v, i d =-1.0a - 110 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1.4 v g fs forward transconductance v ds =-10v, i d =-4.7a 8 - s i dss drain-source leakage current (t j =25 o c) v ds =-16v, v gs =0v - - -1 ua i gss gate-source leakage v gs =8v - - na q g total gate charge 2 i d =-4.7a - 24 36 nc q gs gate-source charge v ds =-10v - 18 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2.7 - nc t d(on) turn-on delay time 2 v ds =-10v - 22 35 ns t r rise time i d =-1a - ns t d(off) turn-off delay time r g =6 v gs =-4.5v - 45 ns t f fall time r d =10 -25 ns c iss input capacitance v gs =0v - 985 1580 pf c oss output capacitance v ds =-15v - 180 - pf c rss reverse transfer capacitance f=1.0mhz - 160 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s max diode forward current v sd diode forward voltage i s =-1.7a, v gs =0v notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. 100 leshan radio company, ltd. lp2307lt1g , s-lp2307lt1g 48 63 65 -0.6 -0.85 v , ds =0v - - 35 55 70 40 a -1.7 -1.2 v rev .o 2/4
leshan radio company, ltd. typical electrical characteristics rev .o 3/4 figure 1. transfer characteristics figure 2. onregion characteristics figure 3. onresistance versus drain current figure 4. on-resistance vs. gate-to-source voltage 0 2 4 6 8 10 12 14 16 18 0 0.5 1 1.5 2 2.5 vgs, gate-to-source voltage(v) id drain current(a) vds=6v 25c 0 2 4 6 8 10 12 14 16 18 20 00.511.522.533.544.55 vds,drain-to-source voltage(v) id, drain current(a) 25c vgs=1.5v vgs=2v vgs=2.5v 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0123456789101112131415161718 id-drain current(a) rds(on)-on-resistance() vgs=1.5v vgs=2v vgs=2.5v 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 2 2.2 2.4 2.6 2.8 3 vgs-gate-to-source voltage(v) rds(on)-on-resistance() id=4a lp2307lt1g , s-lp2307lt1g
notes: 1. dimensioning and tolerancing per ansi y14.5m,1982 2. controlling dimension: inch. inches millimeters dim min max min max a 0.1102 0.1197 2.80 3.04 b 0.0472 0.0551 1.20 1.40 c 0.0350 0.0440 0.89 1.11 d 0.0150 0.0200 0.37 0.50 g 0.0701 0.0807 1.78 2.04 h 0.0005 0.0040 0.013 0.100 j 0.0034 0.0070 0.085 0.177 k 0.0140 0.0285 0.35 0.69 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.1039 2.10 2.64 v 0.0177 0.0236 0.45 0.60 sot - 23 d j k l a c b s h g v 12 3 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 leshan radio company, ltd. rev .o 4/4 lp2307lt1g , s-lp2307lt1g
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